EC6201 - ELECTRONIC DEVICES (Syllabus) 2013-regulation Anna University

EC6201

ELECTRONIC DEVICES

 LPTC
3003

OBJECTIVES: The student should be made to:
• Be exposed to basic electronic devices
• Be familiar with the theory, construction, and operation of Basic electronic devices.

UNIT I

SEMICONDUCTOR DIODE

9
PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics.

UNIT II

BIPOLAR JUNCTION

9
NPN -PNP -Junctions-Early effect-Current equations – Input and Output characteristics of CE, CB CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.


UNIT III

FIELD EFFECT TRANSISTORS

9
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- ,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.

UNIT IV

SPECIAL SEMICONDUCTOR DEVICES

9
Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.

UNIT V

POWER DEVICES AND DISPLAY DEVICES

9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.

TOTAL : 45 PERIODS

OUTCOMES: At the end of the course, the student should be able to:
• Explain the theory, construction, and operation of basic electronic devices.
• Use the basic electronic devices

TEXT BOOK:
1. Donald A Neaman, “Semiconductor Physics and Devices”, Third Edition, Tata Mc GrawHill Inc. 2007.

REFERENCES
1. Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International Edition, 1978.
2. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice Hall, 10th edition,July 2008.
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