PX4001 - Power Semiconductor Devices (Syllabus) 2021-regulation Anna University

PX4001 - Power Semiconductor Devices (Syllabus) 2021-regulation Anna University

PX4001	POWER SEMICONDUCTOR DEVICES	LPTC

3003

OBJECTIVES:

• To understand the concepts related with power switches and its requirements.
• To know about the developments and characteristics of Silicon Carbide (SiC) and Galium Nitride (GaN) devices..
• To understand the working, steady state and switching characteristics of current controlled and voltage controlled silicon devices.
• To study the working of driving circuits, protection circuits for power devices.
• To understand the thermal characteristics of power devices and the ability to design heat sink for the power devices.

UNIT I	INTRODUCTION	9

Power switching devices overview – Attributes of an ideal switch, application requirements, circuit symbols; Power handling capability – (SOA); Power diodes - Types, forward and reverse characteristics, switching characteristics – rating. Features and Brief History of Silicon Carbide- Promise and Demonstration of SiC Power Devices- Physical Properties of Silicon Carbide devices - Unipolar and Bipolar Diodes- GaN Technology Overview.

UNIT II	CURRENT CONTROLLED DEVICES	9

BJT’s – Construction, static characteristics, switching characteristics; Negative temperature coefficient and second breakdown; - Thyristors – Construction, working, static and transient characteristics, types, series and parallel operation; comparison of BJT and Thyristor – steady state and dynamic models of BJT & Thyristor- Basics of GTO, SiC based Bipolar devices- Applications- Building a GaN Transistor -GaN Transistor Electrical Characteristics

UNIT III	VOLTAGE CONTROLLED DEVICES	9

Power MOSFETs and IGBTs – Principle of voltage controlled devices, construction, types, static and switching characteristics, steady state and dynamic models of MOSFET and IGBTs - and IGCT. New semiconductor materials for devices – Intelligent power modules- study of modules like APTGT100TL170G, MSCSM70TAM05TPAG. Integrated gate commutated thyristor (IGCT) - SiCbased unipolar devices-applications

UNIT IV	DEVICE SELECTION , DRIVING and PROTECTING CIRCUITS	9

Device selection strategy – On-state and switching losses – EMI due to switching. Necessity of isolation, pulse transformer, optocoupler – Gate drive integrated circuit: Study of Driver IC – IRS2110/2113. SCR, MOSFET, IGBTs and base driving for power BJT. - Over voltage, over current and gate protections; Design of snubbers

UNIT V	THERMAL PROTECTION	9

Heat transfer – conduction, convection and radiation; Cooling – liquid cooling, vapour – phase cooling; Guidance for hear sink selection – Thermal resistance and impedance -Electrical analogy of thermal components, heat sink types and design – Mounting types- switching loss calculation for power device

TOTAL : 45 PERIODS

OUTCOMES: After completing the above course, students will be able to

CO1: Identification of suitable device for the application.
CO2: Know the advantages of Silicon Carbide devices and Galium Nitride devices.
CO3: Understand the principles and characteristics of Silicon devices, Silicon Carbide devices and Galium Nitride devices.
CO4: Design proper driving circuits and protection circuits.
CO5: Construct a proper thermal protective devices for power semiconductor devices.

REFERENCES:

1. Rashid M.H., " Power Electronics Circuits, Devices and Applications ", Pearson, 4th Edition, 10th Impression 2021.
2. Ned Mohan, T.M.Undeland and W.P.Robbins, “Power Electronics: converters, Application and design”, 3rd edition Wiley, 2007
3. Tsunenobu Kimoto and James A. Cooper , Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications, First Edition., 2014 John Wiley & Sons Singapore Pte Ltd
4. Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch, GaN TRANSISTORS FOR EFFICIENT POWER CONVERSION, Second Edition, Wiley, 2015
5. Biswanath Paul, Power Electronics, Universities Press 2019